vishay siliconix sud50p04-09l document number: 72243 s10-0546-rev. c, 08-mar-10 www.vishay.com 1 p-channel 40 v (d-s), 175 c mosfet features ? trenchfet ? power mosfets ? 175 c junction temperature ? compliant to rohs directive 2002/95/ec product summary v ds (v) r ds(on) ( ) i d (a) d - 40 0.0094 at v gs = - 10 v - 50 0.0145 at v gs = - 4.5 v - 50 to-252 s gd top view drain connected to tab ordering information: SUD50P04-09L-E3 (lead (pb)-free) s g d p-channel mosfet notes: a. duty cycle 1 %. b. when mounted on 1" square pcb (fr-4 material). c. see soa curve for voltage derating. d. package limited. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d - 50 d a t c = 125 c - 50 d pulsed drain current i dm - 100 avalanche current i as - 50 single avalanche energy a l = 0.1 mh e as 125 mj power dissipation t c = 25 c p d 136 c w t a = 25 c 3 b, c operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient b t 10 s r thja 15 18 c/w steady state 40 50 junction-to-case r thjc 0.82 1.1
www.vishay.com 2 document number: 72243 s10-0546-rev. c, 08-mar-10 vishay siliconix sud50p04-09l notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 40 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 32 v, v gs = 0 v - 1 a v ds = - 32 v, v gs = 0 v, t j = 125 c - 50 v ds = - 32 v, v gs = 0 v, t j = 175 c - 150 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v - 50 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 24 a 0.0075 0.0094 v gs = - 10 v, i d = - 50 a, t j = 125 c 0.014 v gs = - 10 v, i d = - 50 a, t j = 175 c 0.017 v gs = - 4.5 v, i d = - 18 a 0.0115 0.0145 forward transconductance a g fs v ds = - 5 v, i d = - 24 a 73 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1 mhz 4800 pf output capacitance c oss 700 reverse transfer capacitance c rss 550 total gate charge c q g v ds = - 20 v, v gs = - 10 v, i d = - 50 a 102 150 nc gate-source charge c q gs 18.5 gate-drain charge c q gd 27 tu r n - o n d e l ay t i m e c t d(on) v dd = - 20 v, r l = 0.4 i d ? - 50 a, v gen = - 10 v, r g = 6 10 15 ns rise time c t r 60 90 turn-off delay time c t d(off) 145 220 fall time c t f 140 220 source drain-diode ratings and characteristics t c = 25 c b continuous current i s - 50 a pulsed current i sm - 100 forward voltage a v sd i f = - 50 a, v gs = 0 v - 1.0 - 1.5 v reverse recovery time t rr i f = - 50 a, di/dt = 100 a/s 55 85 ns
document number: 72243 s10-0546-rev. c, 08-mar-10 www.vishay.com 3 vishay siliconix sud50p04-09l typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance 0 20 40 60 80 100 012345 v ds - drain-to-source voltage (v) - drain current (a) i d 3 v 4 v 2 v v gs = 10 v thru 5 v 0 20 40 60 80 100 120 0 20406080100 v gs - gate-to-source voltage (v) - transconductance (s) g fs t c = - 55 c 25 c 125 c 0 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 35 40 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c - 55 c t c = 125 c 0.000 0.004 0.008 0.012 0.016 0.020 0 20406080100 i d - drain current (a) r ds(on) v gs = 10 v v gs = 4.5 v - on-resistance ( ) 0 2 4 6 8 10 0 20 40 60 80 100 120 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 20 v i d = 50 a
www.vishay.com 4 document number: 72243 s10-0546-rev. c, 08-mar-10 vishay siliconix sud50p04-09l typical characteristics 25 c, unless otherwise noted thermal ratings vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72243 . on-resistance vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 175 (normalized) - on-resistance t j - junction temperature (c) r ds(on) v gs = 10 v i d = 50 a source-drain diode forward voltage 0.0 0.3 0.6 0.9 1.2 1.5 v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 t j = 25 c t j = 150 c maximum avalanche and drain current vs. case temperature 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t c - case temperature (c) - drain current (a) i d safe operating area 1000 10 0.1 1 10 100 1 100 t c = 25 c single pulse i dm limited i d(on) limited * ds(on) limited by r bvdss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified - drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized eff ective transient thermal impedance 1 0.2 0.1 0.05 duty cycle = 0.5 single pulse 0.02
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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